Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode

Chemical Physics Letters

Volumn 400, Issue 4-6, 2004, Pages 401-405

  Ran, G Z ^a   Wu, Z L ^b   Ma, G L ^a   Xu, A G ^a   Qiao, Y P ^a   Wu, S K ^a   Yang, B R ^b   Qin, G G ^a,c  

^a PEKING UNIVERSITY   (China)

^b BEIJING NORMAL UNIVERSITY   (China)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE;

ARTICLE; CONDUCTANCE; ELECTRICITY; ELECTRON TRANSPORT; FILM; LIGHT EMITTING DIODE;

EID: 10344236995     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2004.10.147     Document Type: Article

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