Room-temperature 1.54 μm electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n+-Si substrates by magnetron sputtering

Journal of Applied Physics

Volumn 90, Issue 11, 2001, Pages 5835-5837

  Ran, G Z ^a   Chen, Y ^a   Qin, W C ^a   Fu, J S ^a   Ma, Z C ^b   Zong, W H ^b   Lu, H ^c   Qin, J ^c   Qin, G G ^a,d  

^a PEKING UNIVERSITY   (China)

^b HSRI   (China)

^c INSTITUTE OF PHYSICS   (China)

^d INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035576123     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1413231     Document Type: Article

References (16)

1. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, Appl. Phys. Lett. 43, 943 (1983).
2. J. Michel, L. V. C. Assali, M. T. Morse, and L. C. Kimerling, Semicond. Semimetals 49, 111 (1998).
3. H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haydl, and J. Schneider, Appl. Phys. Lett. 46, 381 (1985).
4. S. Coffa, F. Priolo, G. Franzò, V. Bellani, A. Camera, and C. Spinells, Phys. Rev. B 48, 11782 (1993).
5. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 64, 2842 (1994).
6. S. Lombardo, S. U. Campisano, G. N. van der Hoven, and A. Polman, J. Appl. Phys. 77, 6504 (1995).
7. J. Stimmer, A. Reittinger, J. F. Nützel, G. Abstreiter, H. Holzbrecher, and Ch. Buchal, Appl. Phys. Lett. 68, 3290 (1996).
8. A. Polman, J. Appl. Phys. 82, 1 (1997).
9. S. Wang, A. Echau, E. Neufeld, R. Carius, and Ch. Buchal, Appl. Phys. Lett. 71, 2824 (1997).
10. M. Matsuoka and S.-i. Tohno, Appl. Phys. Lett. 71, 96 (1997).
11. W.-X. Ni, K. B. Joelsson, C.-X. Du, I. A. Buyanova, G. Pozina, W. M. Chen, G. V. Hansson, and B. Monemar, Appl. Phys. Lett. 70, 3383 (1997).
12. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman. P. M. Fauchet, K. L. Moore, and D. G. Hall. Appl. Phys. Lett. 70, 1790 (1997).
13. M. Fujji, M. Yoshida, Y. Kanzawa, S. Hayashi, and K. Yamamoto, Appl. Phys. Lett. 71, 1198 (1997).
14. C. E. Chryssou, A. J. Kenyon, T. S. Iwayama, C. W. Pitt, and D. E. Hole, Appl. Phys. Lett. 75, 2011 (1999).
15. J. H. Shin, S.-y. Seo, S. Kim, and S. G. Bishop, Appl. Phys. Lett. 76, 1999 (2000).
16. M. Fujji, M. Yoshida, S. Hayashi, and K. Yamamoto, J. Appl. Phys. 84, 4525 (1998).