Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode

Applied Physics Letters

Volumn 74, Issue 4, 1999, Pages 609-611

  Zhou, X ^a   He, J ^a   Liao, L S ^a   Lu, M ^a   Xiong, Z H ^a   Ding, X M ^a   Hou, X Y ^a   Tao, F G ^a   Zhou, C E ^a   Lee, S T ^b  

^a FUDAN UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; BAND STRUCTURE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; LIGHT EMISSION; MATHEMATICAL MODELS; ORGANIC COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; VACUUM APPLICATIONS;

HOLE INJECTION; INDIUM TIN OXIDE; ORGANIC LIGHT EMITTING DEVICES; SILICON ANODES;

LIGHT EMITTING DIODES;

EID: 0033601622     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123161     Document Type: Article

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