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Volumn 225, Issue 2-4, 2001, Pages 410-414

A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces

Author keywords

A1. Scanning tunneling microscopy; A3. Metalorganic vapor phase epitaxy; B1. Arsine; B1. Germanium; B1. Phosphine

Indexed keywords

ANNEALING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SURFACE CHEMISTRY;

EID: 0035335290     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00901-0     Document Type: Conference Paper
Times cited : (13)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.