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Volumn 225, Issue 2-4, 2001, Pages 410-414
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A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces
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Author keywords
A1. Scanning tunneling microscopy; A3. Metalorganic vapor phase epitaxy; B1. Arsine; B1. Germanium; B1. Phosphine
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Indexed keywords
ANNEALING;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GERMANIUM;
SURFACE CHEMISTRY;
ARSINE;
PHOSPHINE;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0035335290
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00901-0 Document Type: Conference Paper |
Times cited : (13)
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References (11)
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