Abnormal temperature dependence of dielectric constant in (Ba 0.7Sr0.3)TiO3 thin films

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4106-4108

  Yang, Hao ^a   Miao, Jun ^a   Chen, Bin ^a   Zhao, Li ^a   Xu, Bo ^a   Dong, Xiaoli ^a   Cao, Lixin ^a   Qiu, Xianggang ^a   Zhao, Bairu ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CHARGE; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HYSTERESIS; PERMITTIVITY; PHASE TRANSITIONS; THIN FILMS;

CURIE TEMPERATURE; HYSTERESIS LOOP; SURFACE CHARGE DENSITY; VIRTUAL GROUND CIRCUIT MODE;

BARIUM TITANATE;

EID: 10044284379     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1812575     Document Type: Article

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21. The dielectric constant used in Fig. 4 is measured at 0 kV/cm and 10 kHz.