Local properties of grain boundaries in semiconducting ceramics

Solid State Ionics

Volumn 173, Issue 1-4 SPEC. ISS., 2004, Pages 41-50

  Freer, R ^a   Leach, C ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Ceramics; Grain boundaries; Scanning electron microscopy; Semiconductor; Thermistor; Varistor

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM TITANATE; CERAMIC MATERIALS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; GRAIN BOUNDARIES; IMAGE ANALYSIS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; THERMISTORS; VARISTORS; ZINC OXIDE;

LOCAL IMPEDANCE IMAGING; REMOTE ELECTRON BEAM INDUCED CURRENT; SCANNING SURFACE POTENTIAL MICROSCOPY; SEMICONDUCTOR CERAMICS;

SEMICONDUCTOR MATERIALS;

EID: 10044268433     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2004.07.050     Document Type: Conference Paper

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