-
1
-
-
33750860386
-
Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices
-
M. N. Baibich et al., "Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices," Phys. Rev. Lett., v. 61, pp. 2472, 1988.
-
(1988)
Phys. Rev. Lett.
, vol.61
, pp. 2472
-
-
Baibich, M.N.1
-
3
-
-
10044228415
-
Infineon, IBM hone magnetic RAM strategy
-
Apr. 17
-
P. Clarke, "Infineon, IBM hone magnetic RAM strategy," EE Times, Apr. 17, 2001.
-
(2001)
EE Times
-
-
Clarke, P.1
-
4
-
-
10044227290
-
Taiwan company seeking MRAM foundry partner
-
May 24
-
M. Clendenin, "Taiwan company seeking MRAM foundry partner," EE Times, May 24, 2001.
-
(2001)
EE Times
-
-
Clendenin, M.1
-
5
-
-
10044248417
-
Samsung eases into the MRAM memory race
-
Feb. 11
-
M. Clendenin, "Samsung eases into the MRAM memory race," EE Times, Feb. 11, 2003.
-
(2003)
EE Times
-
-
Clendenin, M.1
-
6
-
-
10044297223
-
TSMC teams with government on MRAM development
-
Mar. 24
-
M. Clendenin, "TSMC teams with government on MRAM development," EE Times, Mar. 24, 2002.
-
(2002)
EE Times
-
-
Clendenin, M.1
-
7
-
-
10044293048
-
MRAM pioneer hopes MRAMs set for liftoff
-
Sept. 6
-
T. Costlow, "MRAM pioneer hopes MRAMs set for liftoff," EE Times, Sept. 6, 2001.
-
(2001)
EE Times
-
-
Costlow, T.1
-
8
-
-
10044265376
-
32K × 8 magnetic nonvolatile CMOS RAM
-
June 21
-
Cypress Semiconductor Corp., "32K × 8 Magnetic Nonvolatile CMOS RAM," Preliminary datasheet for the CY9C62256, June 21, 2002.
-
(2002)
Preliminary Datasheet for the CY9C62256
-
-
-
9
-
-
10044231682
-
Magnetoresistive random access memory (MRAM)
-
NVE Corp., Feb. 4
-
J. M. Daughton, "Magnetoresistive Random Access Memory (MRAM)," white paper, NVE Corp., Feb. 4, 2000.
-
(2000)
White Paper
-
-
Daughton, J.M.1
-
10
-
-
10044286012
-
Advanced MRAM concepts
-
published by NVE Corp., Feb. 7
-
J. M. Daughton, "Advanced MRAM Concepts," white paper published by NVE Corp., Feb. 7, 2001.
-
(2001)
White Paper
-
-
Daughton, J.M.1
-
11
-
-
10044243712
-
-
"Spin Dependent Tunneling Memory," U.S. Patent 6,349,053 B1, Feb. 19
-
J. M. Daughton et al., "Spin Dependent Tunneling Memory," U.S. Patent 6,349,053 B1, Feb. 19, 2002.
-
(2002)
-
-
Daughton, J.M.1
-
12
-
-
10044273066
-
A high-speed 128-kb MRAM core for future universal memory applications
-
Apr.
-
J. DeBrosse et al., "A High-Speed 128-kb MRAM Core for Future Universal Memory Applications," IEEE JSSC, vol. 39, no. 4, Apr. 2004, pp. 678-683.
-
(2004)
IEEE JSSC
, vol.39
, Issue.4
, pp. 678-683
-
-
DeBrosse, J.1
-
13
-
-
0242490989
-
A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
-
June 10-14, Honolulu
-
M. Durlam et al., "A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects," IEEE Symp. VLSI Circuits, June 10-14, 2002, Honolulu, pp. 158-161.
-
(2002)
IEEE Symp. VLSI Circuits
, pp. 158-161
-
-
Durlam, M.1
-
14
-
-
0038528647
-
A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
-
May
-
M. Durlam et al., "A 1-Mbit MRAM Based on 1T1MTJ Bit Cell Integrated With Copper Interconnects," IEEE JSSC, vol. 38, no. 5, May 2003, pp. 769-773.
-
(2003)
IEEE JSSC
, vol.38
, Issue.5
, pp. 769-773
-
-
Durlam, M.1
-
15
-
-
0042141258
-
The science and technology of magnetoresistive tunneling memory
-
Mar.
-
B. N. Engel et al., "The Science and Technology of Magnetoresistive Tunneling Memory," IEEE Trans. Nanotechnology, vol. 1, no. 1, Mar. 2002, pp. 32-38.
-
(2002)
IEEE Trans. Nanotechnology
, vol.1
, Issue.1
, pp. 32-38
-
-
Engel, B.N.1
-
16
-
-
10044241691
-
-
"Magnetoresistive Random Access Memory for Improved Scalability," U.S. Pat. 6,531,732 B1, Mar. 11
-
B. N. Engel et al., "Magnetoresistive Random Access Memory for Improved Scalability," U.S. Pat. 6,531,732 B1, Mar. 11, 2003.
-
(2003)
-
-
Engel, B.N.1
-
17
-
-
0029722448
-
Projected applications, status and plans for Honeywell high density, performance, nonvolatile memory
-
June 24-26
-
G. B. Granley and A. T. Hurst, "Projected applications, status and plans for Honeywell high density, performance, nonvolatile memory," IEEE Nonvolatile Memory Technology Conf., June 24-26, 1996, p. 138.
-
(1996)
IEEE Nonvolatile Memory Technology Conf.
, pp. 138
-
-
Granley, G.B.1
Hurst, A.T.2
-
18
-
-
10044270962
-
NEC. Toshiba to develop 256-Mbyte MRAM by 2004
-
Sept. 19
-
Y. Hara, "NEC. Toshiba to develop 256-Mbyte MRAM by 2004," EE Times, Sept. 19, 2002.
-
(2002)
EE Times
-
-
Hara, Y.1
-
19
-
-
10044225705
-
Toshiba proposes double-junction MRAM structure
-
Sept. 19
-
Y. Hara, "Toshiba proposes double-junction MRAM structure," EE Times, Sept. 19, 2002.
-
(2002)
EE Times
-
-
Hara, Y.1
-
20
-
-
10044281681
-
Magnetoresistive random access memory (MRAM) and reliability
-
Oct. 20-23, Lake Tahoe, CA
-
B. Hughes, "Magnetoresistive Random Access Memory (MRAM) and Reliability," IEEE Int'l. Integrated Reliability Workshop, Oct. 20-23, 2003, Lake Tahoe, CA, pp. 169-174.
-
(2003)
IEEE Int'l. Integrated Reliability Workshop
, pp. 169-174
-
-
Hughes, B.1
-
24
-
-
0034855478
-
Radiation hardened memory development at honeywell
-
Mar. 10-17, Big Sky, MT
-
H. Kaakani, "Radiation Hardened Memory Development at Honeywell," IEEE Aerospace Conference, Mar. 10-17, 2001, Big Sky, MT, vol. 5, pp. 2273-2279.
-
(2001)
IEEE Aerospace Conference
, vol.5
, pp. 2273-2279
-
-
Kaakani, H.1
-
25
-
-
10044255359
-
IBM says breakthrough will enable commercial MRAMs
-
Dec. 8
-
P. Kallender, "IBM says breakthrough will enable commercial MRAMs," EE Times, Dec. 8, 2000.
-
(2000)
EE Times
-
-
Kallender, P.1
-
26
-
-
0035054710
-
A 256kb 3.0V 1T1MTJ nonvolatile magnetoresistive RAM
-
Feb. 4-8, San Francisco
-
P. K. Naji et al., "A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM," Digest of Papers, IEEE ISSCC 2001, Feb. 4-8, 2001, San Francisco, pp. 122-123.
-
(2001)
Digest of Papers, IEEE ISSCC 2001
, pp. 122-123
-
-
Naji, P.K.1
-
27
-
-
10044265375
-
A 4Mb 0.18μm 1T1MJT toggle MRAM memory
-
Feb. 15-19, San Francisco
-
J. Nabas et al., "A 4Mb 0.18μm 1T1MJT Toggle MRAM Memory," IEEE ISSCC 2004, Feb. 15-19, 2004, San Francisco, pp. 44-45.
-
(2004)
IEEE ISSCC 2004
, pp. 44-45
-
-
Nabas, J.1
-
29
-
-
0031606684
-
The magic of magnetic multilayers
-
Jan.
-
S. S. P. Parkin, "The magic of magnetic multilayers," IBM J. Res. Develop., vol. 42, no. 1, Jan. 1998, pp. 3-6.
-
(1998)
IBM J. Res. Develop.
, vol.42
, Issue.1
, pp. 3-6
-
-
Parkin, S.S.P.1
-
30
-
-
0032573499
-
Magnetoelectronics
-
Nov. 27
-
G. Prinz, "Magnetoelectronics," Science, vol. 282, no. 5394, Nov. 27, 1998, pp. 1660-1663.
-
(1998)
Science
, vol.282
, Issue.5394
, pp. 1660-1663
-
-
Prinz, G.1
-
32
-
-
0025495027
-
10-35 nanosecond magnetoresistive memories
-
Apr.
-
K. T. M. Ranmuthu et al., "10-35 nanosecond magnetoresistive memories," IEEE Trans. Magnetics, vol. 26, no. 5, Apr. 1990, pp. 2532-2534.
-
(1990)
IEEE Trans. Magnetics
, vol.26
, Issue.5
, pp. 2532-2534
-
-
Ranmuthu, K.T.M.1
-
33
-
-
0026911701
-
High speed (10-20 ns) non-volatile MRAM with folded storage elements
-
Apr.
-
K. T. M. Ranmuthu et al., "High Speed (10-20 ns) Non-volatile MRAM with Folded Storage Elements," IEEE Trans. Magnetics, vol. 28, no. 5, Apr. 1992, pp. 2359-2361.
-
(1992)
IEEE Trans. Magnetics
, vol.28
, Issue.5
, pp. 2359-2361
-
-
Ranmuthu, K.T.M.1
-
34
-
-
10044239362
-
-
"Method of Writing to Scalable Magnetoresistive Random Access Memory Element," U.S. Pat. 6,545,906 B1, Apr. 8
-
L. Savtchenko et al., "Method of Writing to Scalable Magnetoresistive Random Access Memory Element," U.S. Pat. 6,545,906 B1, Apr. 8, 2003.
-
(2003)
-
-
Savtchenko, L.1
-
35
-
-
0029547957
-
An IC process compatible nonvolatile magnetic RAM
-
Washington, DC, Dec. 10-13
-
D. D. Tang et al., "An IC Process Compatible Nonvolatile Magnetic RAM," IEDM, Washington, DC, Dec. 10-13, 1995, pp 997-1000.
-
(1995)
IEDM
, pp. 997-1000
-
-
Tang, D.D.1
-
36
-
-
0030383566
-
High density nonvolatile magnetoresistive RAM
-
San Francisco, Dec. 8-11
-
S. Tehrani et al., "High Density Nonvolatile Magnetoresistive RAM," IEDM, San Francisco, Dec. 8-11, 1996, pp. 193-196.
-
(1996)
IEDM
, pp. 193-196
-
-
Tehrani, S.1
-
37
-
-
0033183994
-
Progress and outlook for MRAM technology
-
Sept.
-
S. Tehrani et al., "Progress and Outlook for MRAM Technology," IEEE Trans. Magnetics, vo. 35, no. 5, Sept. 1999, pp. 2814-2819.
-
(1999)
IEEE Trans. Magnetics
, vol.35
, Issue.5
, pp. 2814-2819
-
-
Tehrani, S.1
-
38
-
-
0034260889
-
Recent developments in magnetic tunnel junction MRAM
-
Sept.
-
S. Tehrani et al., "Recent Developments in Magnetic Tunnel Junction MRAM," IEEE Trans. Magnetics, vol. 36, no. 5, Sept. 2000, pp. 2752-2757.
-
(2000)
IEEE Trans. Magnetics
, vol.36
, Issue.5
, pp. 2752-2757
-
-
Tehrani, S.1
-
39
-
-
20844455024
-
Magnetoresistive random access memory using magnetic tunnel junctions
-
May
-
S. Tehrani et al., "Magnetoresistive Random Access Memory Using Magnetic Tunnel Junctions," Proc. IEEE, vol. 91, no. 5, May 2003, pp. 703-714.
-
(2003)
Proc. IEEE
, vol.91
, Issue.5
, pp. 703-714
-
-
Tehrani, S.1
-
40
-
-
0035900398
-
Spintronics: A spin-based electronics vision for the future
-
Nov. 16
-
S. A. Wolf et al., "Spintronics: A Spin-Based Electronics Vision for the Future," Science, vol. 294, no. 5546, Nov. 16, 2001, pp. 1488-1495.
-
(2001)
Science
, vol.294
, Issue.5546
, pp. 1488-1495
-
-
Wolf, S.A.1
-
41
-
-
10044297221
-
Motorola starts sampling 4-Mbit magnetic RAM
-
Oct. 27
-
P. Clarke, "Motorola starts sampling 4-Mbit magnetic RAM," Silicon Strategies, Oct. 27, 2003.
-
(2003)
Silicon Strategies
-
-
Clarke, P.1
-
42
-
-
10044298433
-
Altis has 16-Mbit magnetic RAM "coming soon", says CEO
-
Feb. 17
-
P. Clarke, "Altis has 16-Mbit magnetic RAM "coming soon", says CEO," Silicon Strategies, Feb. 17, 2004.
-
(2004)
Silicon Strategies
-
-
Clarke, P.1
-
43
-
-
10044284224
-
Cypress discloses first details of MRAM devices
-
Apr. 8
-
M. Lapidus, "Cypress discloses first details of MRAM devices," Silicon Strategies, Apr. 8, 2004.
-
(2004)
Silicon Strategies
-
-
Lapidus, M.1
|