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Volumn 283, Issue 1-3, 2001, Pages 173-178

Excitation mechanisms and structure-related Er3+ emission in amorphous and nanocrystalline GaN films

(8) Aldabergenova, S B a Albrecht, M a Andreev, A A c Inglefield, C b Viner, J b Davydov, V Yu c Taylor, P C b Strunk, H P a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b UNIVERSITY OF UTAH (United States)

c IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ERBIUM; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT ABSORPTION; LUMINESCENCE; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; POSITIVE IONS; SYNTHESIS (CHEMICAL);

RESONANT ABSORPTION;

AMORPHOUS FILMS;

EID: 0035340011 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00359-3 Document Type: Article

Times cited : (11)

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