Low-temperature growth of NiMnSb thin films by pulsed-laser deposition

Applied Physics Letters

Volumn 80, Issue 15, 2002, Pages 2716-2718

  Giapintzakis, J ^a   Grigorescu, C ^a   Klini, A ^a   Manousaki, A ^a   Zorba, V ^a   Androulakis, J ^a   Viskadourakis, Z ^a   Fotakis, C ^a  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING LAYERS; CRYSTALLINE FILMS; GROWTH OF THIN FILMS; HALF-HEUSLER ALLOYS; INAS; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURE GROWTH; MULTILAYER STRUCTURES; POLYCRYSTALLINE; POST DEPOSITION ANNEALING; SI (1 1 1); SPIN-POLARIZED; THIN LAYERS;

CONDUCTIVE FILMS; DEPOSITION; FILM PREPARATION; INDIUM ARSENIDE; MULTILAYER FILMS; PULSED LASER DEPOSITION; SUBSTRATES; THIN FILMS; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

PULSED LASERS;

EID: 79956032144     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1469211     Document Type: Article

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