Revisiting the stopping powers of Si and SiO2 for 4He ions: 0.5-2.0 MeV

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 215, Issue 3-4, 2004, Pages 297-307

  Lennard, W N ^a   Xia, H ^b   Kim, J K ^c  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b SHANDONG UNIVERSITY   (China)

^c Korea Institute of Geosceince and Mineral Resources   (South Korea)

Author keywords

Rutherford backscattering; Silicon dioxide; Stopping power

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRONIC EQUIPMENT; FARADAY EFFECT; GONIOMETERS; HELIUM; ION BEAMS; ION IMPLANTATION; PULSE GENERATORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICATES;

BEAMS CURRENT; PULSE HEIGHT SPECTRUM; STOPPING POWER;

SILICA;

EID: 0942299755     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.08.037     Document Type: Article

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