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Volumn 82, Issue 11, 2003, Pages 1673-1675
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Parametric study of Ga1-xInxNyAs1-yGaAs quantum wells for 1.3-μm laser operation
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Author keywords
[No Author keywords available]
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Indexed keywords
LIGHT EMISSION;
OPTICAL PROPERTIES;
QUANTUM WELL LASERS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM WELLS;
STRAIN;
TELECOMMUNICATION;
SURFACE EMITTING LASERS (SEL);
GALLIUM ALLOYS;
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EID: 0037451381
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1561154 Document Type: Article |
Times cited : (12)
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References (12)
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