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Volumn 82, Issue 11, 2003, Pages 1673-1675

Parametric study of Ga1-xInxNyAs1-yGaAs quantum wells for 1.3-μm laser operation

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; OPTICAL PROPERTIES; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TELECOMMUNICATION;

EID: 0037451381     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1561154     Document Type: Article
Times cited : (12)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.