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Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2277-2279

Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers

(6) Hader, J a Bossert, D a,b Stohs, J a,b,c Chow, W W a,d Koch, S W a,d,e Moloney, J V a

a UNIVERSITY OF ARIZONA (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

c UNIVERSITY OF NEW MEXICO (United States)

d SANDIA NATIONAL LABORATORIES (United States)

e PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; GRADIENT INDEX OPTICS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

LINEWIDTH ENHANCEMENT FACTOR (LWEF);

QUANTUM WELL LASERS;

EID: 0032614962 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123823 Document Type: Article

Times cited : (41)

References (11)

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2
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5
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6
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7
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8
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- The material parameters were taken from: Landolt-Bornstein, New Series III, edited by O. Madelung, Vol. 17a (1984),
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9
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11
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- Chow, W.W.¹ Koch, S.W.² Sargent M. III³

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