Velocity overshoot in ultrathin double-gate silicon-on-insulator transistors

Applied Physics Letters

Volumn 84, Issue 2, 2004, Pages 299-301

  Gamiz F ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; PHONONS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; ULTRATHIN FILMS; VELOCITY;

AVERAGE CONDUCTION EFFECTIVE MASS; PHONON SCATTERING; ULTRATHIN DOUBLE GATE SILICON ON INSULATOR TRANSISTORS; VELOCITY OVERSHOOT;

TRANSISTORS;

EID: 0842333229     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1639133     Document Type: Article

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