Fabrication and characterization of 1T2C-type ferroelectric memory cell

IEICE Transactions on Electronics

Volumn E84-C, Issue 6, 2001, Pages 771-776

  Ogasawara, Satoru ^a   Yoon, Sung Min ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

1T2C; Ferroelectric gate FET; Memory window; Retention; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MOS CAPACITORS; MOSFET DEVICES; OPTIMIZATION; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

FERROELECTRIC CAPACITORS; FLOATING GATE STRUCTURES;

NONVOLATILE STORAGE;

EID: 0035365856     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)

1. Proposal of a novel ferroelectric-gate field effect transistor with separated functions for data read out and data storage
2. A semi-empirical cad model of ferroelectric capacitor for circuit simulation