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Volumn 40, Issue 1-5, 2001, Pages 31-40
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Data disturb characteristics of 1T2C ferroelectric memory array
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Author keywords
1T2C; Data disturb; Ferroelectric gate FET; Memory array; SrBi2Ta2O9
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Indexed keywords
DATA STORAGE EQUIPMENT;
PROBLEM SOLVING;
THICK FILMS;
DATA DISTURB;
FERROELECTRIC-GATE FET;
MEMORY ARRAY;
FERROELECTRIC DEVICES;
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EID: 3142681605
PISSN: 10584587
EISSN: 16078489
Source Type: Conference Proceeding
DOI: 10.1080/10584580108010827 Document Type: Article |
Times cited : (3)
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References (8)
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