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Volumn 40, Issue 5 A, 2001, Pages
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Write and read-out operations of novel 1T2C-type ferroelectric memory cells with an array structure
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Author keywords
1T2C; Ferroelectric memory cell; SrBi2Ta2O9; Write and read out operation
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Indexed keywords
CAPACITORS;
DATA STORAGE EQUIPMENT;
FERROELECTRIC DEVICES;
GATES (TRANSISTOR);
MOSFET DEVICES;
STRONTIUM COMPOUNDS;
SUBSTRATES;
FERROELECTRIC MEMORY CELLS;
SILICON ON INSULATOR TECHNOLOGY;
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EID: 0035328906
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.l449 Document Type: Article |
Times cited : (3)
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References (11)
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