Analysis of read-out operation in 1T2C-type ferroelectric memory cell

Integrated Ferroelectrics

Volumn 40, Issue 1-5, 2001, Pages 83-92

  Ogasawara, Satoru ^a   Yoon, Sung Min ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

1T2C; Ferroelectric gate FET; Memory window; Retention

Indexed keywords

CAPACITORS; MOSFET DEVICES; OPTIMIZATION; PARAMETER ESTIMATION;

FERROELECTRIC-GATE FET; MEMORY WINDOW;

FERROELECTRIC DEVICES;

EID: 32444445212     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108010831     Document Type: Article

References (3)

1. H. Ishiwara, Integrated Ferroelectrics, 34, 11 (2001)
2. T. Tamura, Y. Arimoto, and H. Ishiwara, Abst. of Intern. Sympo. on Integrated Ferroelectrics 2001, p1.2.2
3. K. Aizawa, E. Tokumitsu, K. Okamoto, and H. Ishiwara, Appl. Phys. Lett., 76, 2609 (2000)