Tunneling through Thin Oxides—New Insights from Microscopic Calculations

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 153-159

  Stadele M ^a   Tuttle, B ^b   Fischer, B ^c   Hess, K ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b BEHREND COLLEGE   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Momentum Conservation; Oxide; Present Method; SiO2; Transmission Coefficient

Indexed keywords

HETEROJUNCTIONS; MOMENTUM; OXIDES; SILICA;

ENERGY DEPENDENT; MICROSCOPIC MODELS; MOMENTUM CONSERVATIONS; PRESENT METHOD; SIO2; TRANSMISSION COEFFICIENTS; TRANSMISSION PROBABILITIES; TUNNELING PROBABILITIES;

MOSFET DEVICES;

EID: 79960282613     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020700819083     Document Type: Article

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