Comparative analysis of the H2 passivation of interface defects at the (100)Si/SiO2 interface using electron spin resonance

Solid State Communications

Volumn 97, Issue 4, 1996, Pages 255-259

  Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

A. semiconductors; A. surfaces and interfaces; C. point defects; E. electron paramagnetic resonance

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; ELECTRON SPIN RESONANCE SPECTROSCOPY; INTERFACES (MATERIALS); PASSIVATION; REACTION KINETICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICA; SURFACES;

INTERFACE DEFECTS;

POINT DEFECTS;

EID: 0029754336     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00535-8     Document Type: Article

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