Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface

Physical Review B

Volumn 42, Issue 6, 1990, Pages 3765-3768

  Stesmans, A ^a   Van Gorp, G ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041029472     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.42.3765     Document Type: Article

References (24)

1. Comparison of the Low-Temperature ESR Properties ofPb0Defects Residing at the Interfaces of Differently-Oxidized Si/SiO2Structures*
2. Evidence for a phase-transition-induced change in the surface spin-flip probability of conduction electrons from CESR on n-irradiated, LIF; its application as an intensity reference
3. Structural Features at the Si — SiO2Interface*
4. C. Kittel and E. Abrahams Phys. Rev. 90, 238 (1953).