Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4830-4832

  Borgstrom, M ^a   Samuelson, L ^a   Seifert, W ^a   Mikkelsen, A ^a   Ouattara, L ^a   Lundgren, E ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DEFECTS; INTERFACES (MATERIALS); MONOLAYERS; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; TIN; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; WETTING;

PATTERNED SURFACES; PHASE SEGREGATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0348197035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632542     Document Type: Article

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