Thorough characterization of deep-submicron surface and buried channel pMOSFETs

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 971-975

  Cretu, B ^a   Fadlallah, M ^a   Ghibaudo, G ^a   Jomaah, J ^a   Balestra, F ^a   Guegan G ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

Device lifetime; Flicker noise; Hot carrier effects; Low temperature; Short channel effects

Indexed keywords

CARRIER MOBILITY; CHARACTERIZATION; DEGRADATION; EXTRAPOLATION; FLICKERING; GATES (TRANSISTOR); SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

DEEP-SUBMICRON SURFACES;

MOSFET DEVICES;

EID: 0036642978     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00028-X     Document Type: Conference Paper

References (8)