Analysis of Third-Order Intermodulation Distortion in Common-Emitter BJT and HBT Amplifiers

IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing

Volumn 50, Issue 12, 2003, Pages 994-1001

  Vuolevi, Joel ^a,b   Rahkonen, Timo ^a  

^a UNIVERSITY OF OULU   (Finland)

^b RF Integrated Corporation   (United States)

Author keywords

Electro thermal; Memory effects; Nonlinear distortion; Power amplifier; Volterra analysis

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; CORRELATION METHODS; DATA REDUCTION; ELECTRIC POTENTIAL; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERMODULATION; LINEARIZATION; MATHEMATICAL MODELS; NONLINEAR SYSTEMS; POLYNOMIALS; POWER AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTORS (BJT); COMMON EMITTERS (CE); ELECTRO-THERMAL VOLTERRA MODEL; INTERMODULATION DISTORTION; MEMORY EFFECTS;

SIGNAL DISTORTION;

EID: 0347968229     PISSN: 10577130     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSII.2003.820245     Document Type: Article

References (24)

1. C. C. McAndrew, J. A. Seitchik, D. F. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, D. J. Roulston, M. Schroter, P. van Wijnen, and L. F. Wagner, "VBIC95, The vertical bipolar intercompany model," IEEE J. Solid-State Circuits, vol. 31, pp. 1476-1483, Sept. 1996.
2. N. De Vreede, H. C. De Graaff, K. Mounthaan, M. De Kok, J. L. Tauritz, and R. G. F. Baets, "Advanced modeling of distortion effects in bipolar transistors using the Mextram model," IEEE J. Solid-State Circuits, vol. 31, pp. 114-121, Jan. 1996.
3. R. Telichevesky, K. Kundert, I. Elfadel, and J. White, "Fast simulation algorithms for RF circuits," in Proc. IEEE Custom Integrated Circuits Conf., 1996, pp. 437-444.
4. L. Bin and S. Prasad, "Intermodulation analysis of the collector-up In-GaAs/InAlAs/InP HBT using Volterra series," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 1321-1323, Sept. 1998.
5. J. Lee, W. Kim, Y. Kim, T. Rho, and B. Kim, "Intermodulation mechanism and linearization of AlGaAs/GaAs HBT's," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2065-2072, Dec. 1997.
6. A. Crosmun and S. Maas, "Minimization of intermodulation distortion in GaAs MESFET small-signal amplifiers," IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1411-1417, Sept. 1989.
7. C. C. McAndrew and L. W. Nagel, "Early effect modeling in SPICE," IEEE J. Solid-State Circuits, vol. 31, pp. 136-138, Jan. 1996.
8. P. Perugupalli, Y. Xu, and K. Shenai, "Measurements of thermal and packaging limitations in LDMOSFET's for RFIC Application," in Proc. IEEE Instrumentation and Measurement Technology Conf, vol. 1, 1998, pp. 160-164.
9. A. R. Hefner and D. L. Blackburn, "Simulating the dynamic electrothermal behavior of power electronics circuits and systems," IEEE Trans. Power Electron., vol. 8, pp. 376-385, Oct. 1993.
10. A. R. Hefner, "A dynamic electro-thermal model for the IGBT," IEEE Trans. Ind. Applicat., vol. 30, pp. 394-405, Mar./Apr. 1994.
11. J. Vuolevi and T. Rahkonen, "Third-order intermodulation distortion caused by thermal power feedback," in Proc. Norchip, Oslo, Norway, 1999, pp. 120-125.
12. S. S. Lee and D. J. Allstot, "Electrothermal simulation of integrated circuits," IEEE J. Solid-State Circuits, vol. 28, pp. 1283-1293, Dec. 1993.
13. P. Wambacq and W. Sansen, Distortion Analysis of Analog Integrated Circuits. Norwell, MA: Kluwer, 1998.
14. J. Vuolevi and T. Rahkonen, "A Volterra model for common-source FET amplifiers in third order intermodulation distortion simulations," in Proc. Eur. Conf. Circuit Theory and Design (ECCTD), Helsinki, Finland, Aug. 28-31, 2001, pp. II-41-II-41.
15. S. A. Maas and A. Crosmun, "Modeling the gate I/V characteristic of a GaAs MESFET for Volterra-series analysis," IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1134-1136, July 1989.
16. J. C. Pedro and J. Perez, "Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 25-33, Jan. 1994.
17. SPICE3 Version 3f3 User's Manual, Univ. Calif., Berkeley, CA, 1993.
18. J. Vuolevi and T. Rahkonen, "Extraction of a nonlinear AC FET model using small-signal S-parameters," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 1311-1315, May 2002.
19. K. Lu, P. Perry, and T. J. Brazil, "A new SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation," Proc. IEEE Int. Microwave Symp. (MTT-S) Dig., vol. 3, pp. 1579-1582, 1994.
20. J. M. Dienot, O. Llopis, P. Andre, M. Gayral, and J. Graffeuil, "A new characterization approach to extract HBT's models for nonlinear microwave CAD," Proc. IEEE Int. Microwave Symp. (MTT-S) Dig., vol. 2, pp. 977-980, 1994.
21. Philips Semiconductors: BGF 11/X NPN 2 GHz RF Power Transistor, Eindhoven, The Netherlands, Apr. 1995.
22. J. Vuolevi, T. Rahkonen, and J. Manninen, "Measurement technique for characterizing memory effects in RF power amplifiers," IEEE Trans. Microwave Theory Tech., vol. 49, pp. 1383-1389, Aug. 2001.
23. J. Vuolevi and T. Rahkonen, Distortion in RF Power Amplifiers. Norwood, MA: Artech House, 2003.
24. A. Heiskanen and T. Rahkonen, "5th-order multi-tone Volterra simulator with component-wise output," in Proc. IEEE Int. Symp. Circuits Systems (ISCAS), vol. 3, Phoenix, AZ, May 26-29, 2002, pp. 591-594.