Extraction of a nonlinear AC FET model using small-signal S-parameters

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 5, 2002, Pages 1311-1315

  Vuolevi, Joel H K ^b   Rahkonen, Timo ^a,b  

^a IEEE

^b UNIVERSITY OF OULU   (Finland)

Author keywords

Nonlinear characterization; Nonlinearity; Pulsed S parameter measurements; S parameters; Self heating; Third order intermodulation; Volterra model

Indexed keywords

INTERMODULATION; MATHEMATICAL MODELS; NONLINEAR NETWORK ANALYSIS; PARAMETER ESTIMATION; RADIO FREQUENCY AMPLIFIERS; TRANSCONDUCTANCE;

NONLINEAR MODELS;

MESFET DEVICES;

EID: 0036565125     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.999144     Document Type: Article

References (8)

1. MOS transistor modeling for RF IC design
2. Frequency-domain analysis of strongly nonlinear circuits using a consistent large-signal model
3. Nonlinear model of the power MESFET including temperature and breakdown effects
4. A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
5. Determining timing for isothermal pulsed-bias S-parameter measurements
6. Volterra model of common-source FET amplifiers for third order intermodulation distortion simulations
7. Measurement technique for characterizing the memory effects in RF power amplifiers