Advanced modeling of distortion effects in bipolar transistors using the mextram model

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 1, 1996, Pages 114-121

  De Vreede, Leo C N ^b,c,d   De Graaff, Henk C ^b,d,e,f,g   Mouthaan, Koen ^a,b,d   De Kok, Marinus ^b,d,h,i,j   Tauritz, Joseph L ^{a,b,d,k,l,m,n,o,p}   Baets, Roel G F ^{a,b,d,q,r,s,t}  

^a IEEE

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c Hague Polytechnic

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^f PHILIPS RESEARCH LABORATORIES   (Netherlands)

^g UNIVERSITY OF TWENTE   (Netherlands)

^h Dutch Air Force Electronic School

ⁱ Polytechnic Institute of the Hague

^j Lab Telecommunication Remote S

^k NEW YORK UNIVERSITY   (United States)

^l UNIVERSITY OF MICHIGAN   (United States)

^m Wheeler Labs

ⁿ RF Department

^o Eta Kappa Nu ^*

^p Dutch Royal Institute of Engineers   (Netherlands)

^q GHENT UNIVERSITY   (Belgium)

^r STANFORD UNIVERSITY   (United States)

^s OPTICAL SOCIETY OF AMERICA   (United States)

^t Flemish Engineers Association

more..

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISTORTION; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; MODULATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

CURRENT GAIN; CUTOFF FREQUENCY; DISTORTION EFFECTS; GUMMEL-POON MODEL; MEXTRAM MODEL; SINGLE OHMIC RESISTOR; SPACE CHARGE MODULATION;

BIPOLAR TRANSISTORS;

EID: 0029754369     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.485873     Document Type: Article

References (21)

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