Lattice site location of ultra-shallow implanted B in Si using ion beam analysis

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages J531-J536

  Kobayashi, Hajime ^a   Nomachi, Ichiro ^a   Kusanagi, Susumu ^a   Nishiyama, Fumitaka ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; CRYSTAL LATTICES; DIFFUSION; FISSION REACTIONS; ION BEAMS; ION IMPLANTATION; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SUBSTITUTION REACTIONS;

NUCLEAR REACTION ANALYSIS (NRA); SPREADING RESISTANCE PROFILING (SRP);

SEMICONDUCTING BORON;

EID: 0035557149     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-669-j5.3     Document Type: Article

References (12)