Effect of ramp rate and annealing temperature on boron transient diffusion in implanted silicon: Kinetic Monte Carlo simulations

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 1018-1021

  Caturla, M J ^a   Foad, M ^a   Diaz de la Rubia, T ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; COMPUTER SIMULATION; DATABASE SYSTEMS; DIFFUSION IN SOLIDS; MONTE CARLO METHODS; SILICON; THERMAL EFFECTS; TRANSIENTS;

BORON TRANSIENT ENHANCED DIFFUSION;

ION IMPLANTATION;

EID: 0033355880     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)