ULSI Gap Filling with a Thin CVD SiO2-Based Insulator: A Review

Russian Microelectronics

Volumn 31, Issue 4, 2002, Pages 224-231

  Vassiliev, V Y ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347649130     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1016383029165     Document Type: Article

References (15)

1. 2-Based Films in Microelectronics, Part 1: Materials, Deposition Methods, and Equipment, Mikroelektronika, 1999, vol. 28, no. 3, pp. 175-182.
2. 2-Based Films in Microelectronics, Part 2: Narrow Gap Fill, Mikroelektronika, 1999, vol. 28, no. 3, pp. 183-192.
3. Vassiliev, V.Yu., Zheng, J.-Z., Liao, M., and Lin, Y.S., Step Coverage and Gap-Fill Properties of Sub-Atmospheric and Atmospheric Pressure TEOS-Ozone Borophosphosilicate Glass Films, Proc. 4th Int. Dielectric for ULSI Multilevel Interconnection Conf., DUMIC (Santa Clara, 1998), pp. 90-97.
4. Vassiliev, V.Y., Lin, C., Gn, F.H., and Cuthbertson, A., A Comparative Analysis of Pre-metal Dielectric Gap-Fill Capability for ULSI Device Applications, Proc. 8th Int. Symp. on IC Technology, Systems and Application, ISIC-99 (Singapore, 1999), pp. 186-189.
5. Vassiliev, V.Y., Lin, C., Tan, Z., and Chu, T., A Study of Properties and Gap-Fill Capability of High-Density Plasma Phosphosilicate Glass Films for ULSI Technology, Proc. 8th Int. Symp. on IC Technology, Systems and Application, ISIC-99 (Singapore, 1999), pp. 561-564.
6. Vassiliev, V.Y., Sudijono, J., and Cuthbertson, A., High Density Plasma Chemically Vapor Deposited Phosphosilicate Glass Films for ULSI Device Applications, in Interconnect and Contact Metallization for ULSI, Proc. - Electrochem. Soc., 1999, vol. 99-31.
7. Vassiliev, V.Y., Wang, C.Y., Sudijono, J.L., Cuthbertson, A., Chu, T., Tan, P.C., Heng, Y.S., Gang, Z., Bhatnagar, A., Rong, P., and Gee, P., Gap-Fill Capability of Subatmospheric Pressure Chemically Vapor Deposited TEOS-Ozone Doped Glass Film Annealed at Low Thermal Budget Conditions, Proc. 6th Int. Dielectric for ULSI Multilevel Interconnection Conf., DUMIC (Santa Clara, 2000), pp. 181-184.
8. Vassiliev, V.Y., Lin, C., Fung, D., Hsieh, J., and Sudijono, J.L., Properties and Gap-Fill Capability of High Density Plasma Chemically Vapor Deposited Phosphosilicate Glass Films for Subquarter Micrometer ULSI Device Technology, Electrochem. Solid State Lett., 2000, vol. 3, no. 2, pp. 80-83.
9. Vassiliev, V.Y., Void-Free Pre-metal Gap-Fill Capability of CVD Films for Subquarter Micron ULSI (Invited Presentation), Proc. 6th Int. Dielectric for ULSI Multilevel Interconnection Conf., DUMIC (Santa Clara, 2000), pp. 121-132.
10. Vassiliev, V.Y., Introduction to Pre-metal Dielectric Gap-Fill Issues and Solutions for Sub-0.25 μm ULSI Device Applications (Invited Presentation to Website), Home Page http://www.semiconbay.com (Thin Film Section), Posted May 9, 2000, pp. 1-36.
11. Vassiliev, V.Y., Sudijono, J.L., and Cuthbertson, A., Trends in Void-Free Pre-metal CVD Dielectrics, Solid State Technol., 2001, vol. 44, no. 3, pp. 129-136.
12. Vassiliev, V.Y., Zheng, J.Z., Tang, S.K., Lu, W., Hua, J., and Lin, Y.S., Growth Kinetics and Deposition-Related Properties of Subatmospheric-Pressure Chemically Vapor Deposited Borophosphosilicate Glass Films, J. Electrochem. Soc., 1999, vol. 146, no. 8, pp. 3039-3051.
13. Dukhanova, T.G., Vassiliev, V.Y., and Veretenin, Yu.I., Borophosphosilicate-Glass Layers in ICs: Fabrication, Properties, and Applications, Obz. Elektron. Tekh., Ser. 3, 1988, issue 4, pp. 1-72.
14. Vassiliev, V.Y., Modern BPSG Film Technology (Invited Lecture), in Visual Booklet of Tutorial Course on the 4th Int. Dielectric for ULSI Multilevel Interconnection Conf., DUMIC (Santa Clara, 1998), pp. 111-192.
15. Vassiliev, V.Y., An Analysis of Flow Properties of Chemically Vapor Deposited Borophosphosilicate Glass Films for ULSI Device Technology, in Interconnect and Contact Metallization for ULSI, Proc. - Electrochem. Soc., 1999, vol. 99-31.