A comparative analysis of pre metal dielectric gap-fill capability for ULSI device technology

International Symposium on IC Technology, Systems and Applications

Volumn 8, Issue , 1999, Pages 186-189

  Vassiliev, V Y ^a   Lin, C ^a   Gn, F H ^a   Cuthbertson, A ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOROPHOSPHATE GLASS; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; OPTIMIZATION; POLYSILICON; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

BOROPHOSPHOSILICATE GLASS; PHOSPHOSILICATE GLASS; PREMETAL DIELECTRIC FILM STACKS;

ULSI CIRCUITS;

EID: 1842678275     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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