Trends in CVD Technology and Equipment for Obtaining Thin Insulating SiO2-Based Films in Microelectronics. Part 1: Materials, Deposition Methods, and Equipment

Russian Microelectronics

Volumn 28, Issue 3, 1999, Pages 146-152

  Vasil'ev, V Yu ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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[No Author keywords available]

Indexed keywords

EID: 0348017074     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

1. Tauber, R., Chemical Vapor Deposition of Amorphous and Polycrystalline Thin Films, Silicon Processing for VLSI Era, Wolf, S., Ed., Boston: Lattice, 1986, vol. 1, pp. 161-197.
2. Adams, A.C., Dielectric and Polysilicon Film Deposition, VLSI Technology, Sze, S.M., Ed., New York: McGraw-Hill, 1988, pp. 233-271.
3. Rossi, R.C., Low Pressure Chemical Vapor Deposition, Handbook of Thin-Film Deposition Processes and Techniques, Shuegraf, K.K., Ed., New York: Noyes, 1988, pp. 80-111.
4. Cheng, H.C., Dielectric and Polysilicon Film Deposition, ULSI Technology, Chang, C.Y. and Sze, S.M., Eds., New York: McGraw-Hill, 1996, pp. 205-269.
5. Vasil'ev, V.Yu. and Sukhov, M.S., Equipment and Methods for LPCVD. Part 1, Obz. Elektron. Tekh., Ser. 7, 1985, no. 3, pp. 1-46.
6. Vasil'ev, V.Yu. and Sukhov, M.S., Equipment and Methods for LPCVD. Part 2, Obz. Elektron. Tekh., Ser. 7, 1985, no. 4, pp. 1-52.
7. Shepelev, S.N., Vasil'ev, V.Yu., and Popov, V.P., Plasmochemical Deposition of Thin Films in Low-Pressure Reactors. Part 1, Obz. Elektron. Tekh., Ser. 2, 1986, no. 7, pp. 1-53.
8. Shepelev, S.N., Vasil'ev, V.Yu., and Popov, V.P., Plasmochemical Deposition of Thin Films in Low-Pressure Reactors. Part 2, Obz. Elektron. Tekh., Ser. 2, 1988, no. 7, pp. 1-62.
9. Vasil'ev, V.Yu., CVD Equipment, Khim. Fiz., 1992, vol. 11, no. 10, pp. 1406-1413.
10. Gargini, P., Glaze, J., and Williams, O., The SIA's National Technology Roadmap for Semiconductors, Solid State Technol., 1998, vol. 41, no. 1, pp. 73-76.
11. Vasil'ev, V.Yu., Models and Mechanisms of LPCVD of Thin Films, Obz. Elektron. Tekh., Ser. 2, 1990, no. 3, pp. 1-56.
12. Vasil'ev, V.Yu., CVD of Silicon Nitride and Silicon Dioxide from Monosilane Derivatives, Cand. Sci. (Chem.) Dissertation, Novosibirsk, 1990.
13. Dukhanova, T.G., Vasil'ev, V.Yu., and Veretenin, Yu.I., Deposition, Properties, and Application of Borophosphosilicate Glass Layers in IC Technology, Obz. Elektron. Tekh., Ser. 3, 1988, no. 4, pp. 1-72.
14. Vassiliev, V.Y., Modern BPSG Film Technology, Visual Booklet of Short Courses at 4th Dielectric for ULSI Multilevel Interconnection Conf., Santa Clara (USA), 1998, pp. 111-192.
15. Singer, P., Low k Dielectrics: The Search Continues, Semicond. Int., 1996, vol. 19, no. 5, pp. 88-96.
16. 2 from TEOS and Related Organosilicon Compounds and Ozone, J. Electrochem. Soc., 1995, vol. 142, no. 7, pp. 2332-2340.
17. Fujino, K., Nishimoto, Y., Tokumasu, N., and Maeda, K., Silicon Dioxide Deposition by Atmospheric-Pressure and Low-Temperature CVD Using TEOS and Ozone, J. Electrochem. Soc., 1990, vol. 137, no. 9, pp. 2883-2887.
18. Robles, S., Russel, K., Galiano, M., Kithcart, V., and Nguen, B.C., Gap Fill and Film Reflow Capability of Subatmospheric Chemical Vapor Deposited Borophosphosilicate Glass, J. Electrochem. Soc., 1996, vol. 143, no. 4, pp. 1414-1421.
19. US Patent 5104482, 1992.
20. US Patent 5362526, 1994.
21. Shepelev, S.N., Samorodova, N.I., Gabbasov, R.K., and Vasil'ev, V.Yu., Plasmochemical Deposition of Multilayer Coatings in a Single Process Cycle, Electron. Prom-st., 1990, no. 12, p. 67.