A study of properties and gap-fill capability of high-density plasma phosphosilicate glass films for ULSI technology

International Symposium on IC Technology, Systems and Applications

Volumn 8, Issue , 1999, Pages 561-564

  Vassiliev, V Y ^a   Lin, C ^a   Tan, Z ^b   Chu, T ^c  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b APPLIED MATERIALS INC   (United States)

^c Applied Materials SEA Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GLASS; OPTIMIZATION; PHOSPHORUS COMPOUNDS; PLASMA DENSITY; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; ULSI CIRCUITS;

BOROPHOSPHOSILICATE GLASS FILM; HIGH DENSITY PLASMA; PHOSPHOSILICATE GLASS FILM; PRE METAL DIELECTRIC; SURFACE CHARGE ANALYSIS;

SEMICONDUCTING FILMS;

EID: 1842640455     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. V.Y. Vassiliev, J.Z. Zheng, S.K. Tang, et al. "Growth Kinetics and Deposition-Related Properties of Subatmospheric - Pressure Chemically Vapor Deposited Borophosphosilicate Glass Films". - J. Electrochem. Soc., (in press).
2. Y. Gobil, P. Fugier, Y. Morand et al. High Density Plasma CVD Phosphorus Silicon Glass for Pre-Metal Application In Sub-0.25 μm CMOS Tedhnology. - Proc. 2nd Dielectrics for ULSI Multilevel Int. Conf. (DUMIC), 108 (1996).
3. L. Murugesh, D. Tribula, K. Rossman et al. "An Innovative HDP-CVD System for Multiple Applications and Device Generations". - Semiconductor Fabtech, 7th edition, p. 185.
4. T. Stephens, S. Li, M. Kwan, A. Collins et al., "Development of HDP-CVD PSG Process for PMD and Passivation Applications". - Proc. of 4th Dielectrics for ULSI Multilevel Int. Conf. (DUMIC), 195 (1998).
5. S. Nag, R. Ramamuthy, W. J. Lay et al. "Low Temperature Pre-Metal Dielectrics for Future ICs." Solid State Technology, 41, 69 (1998).
6. M. Kwan, Z. Tan, S.-M. Cho, et al. "HDP-CVD PSG Process for PMD Applications". - Prog. of 5th Dielectrics for ULSI Multilevel Int. Conf. (DUMIC), 333 (1999).
7. D.S. Armbrust, J. Chapple-Socol, L.Seriani, et al. "High Density Plasma CVD Phosphosilicate Glass Films For Advanced CMOS Technology". - Proc. of 5th Dielectrics for ULSI Multilevel Int. Conf. (DUMIC), 106 (1999).
8. R. Conti, L. Economikos, G.D. Parasouliotis et al. "Process Methods to Fill High Aspect Ratio Gaps Without Premature Constriction". - Proc. of 5th Dielectrics for ULSI Multilevel Int. Conf. (DUMIC), 287 (1999).
9. V. Vassiliev, C. Lin, D. Fung, J. Hsieh, and J. Hui. "Properties and Gap-Fill Capability of HDP-PSG Films for 0.18 μm Device Applications and Beyond". - Proc. of 5th Dielectrics for ULSI Multilevel Int. Conf. (DUMIC), 235 (1999).
10. W. Lu, V. Y. Vassiliev, J.-Z. Zheng, and L.Chan. Comparison of Sub-Atmospheric BPSG Films with Plasma Enhanced BPSG Films. - Proc. of 3rd Dielectrics for ULSI Multilevel Int. Conf. (DUMIC), 219 (1997).