Trends in CVD Technology and Equipment for Obtaining Thin Insulating SiO2-Based Films in Microelectronics. Part 2: Narrow Gap Fill

Russian Microelectronics

Volumn 28, Issue 3, 1999, Pages 153-160

  Vasil'ev, V Yu ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345977059     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (22)

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