Performance of Si sensors irradiated to 5 × 1014 n/cm 2

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 517, Issue 1-3, 2004, Pages 121-127

  Bloch, Ph ^a   Peisert, A ^a   Cheremukhin, A ^b   Dmitriev, A ^b   Zamiatin, N ^b   Go, A ^c   Asimidis, A ^d   Evangelou, I ^d   Kokkas, P ^d   Manthos, N ^d  

^a CERN   (Switzerland)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d UNIVERSITY OF IOANNINA   (Greece)

Author keywords

CMS; High fluence; Preshower; Radiation hardness; Silicon strips

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ERROR ANALYSIS; ESTIMATION; EXTRAPOLATION; LEAKAGE CURRENTS; NEUTRON IRRADIATION; RADIATION HARDENING; SIGNAL TO NOISE RATIO; SILICON SENSORS; SURFACE PROPERTIES;

FLUENCE; PRESHOWER; SILICON STRIPS;

NUCLEAR INSTRUMENTATION;

EID: 0347599227     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.09.058     Document Type: Article

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