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Volumn 409, Issue 1-3, 1998, Pages 184-193

Single-sided p+n and double-sided silicon strip detectors exposed to fluences up to 2 × 1014/cm2 24 GeV protons

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; PROTONS; READOUT SYSTEMS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON SENSORS;

EID: 0032067282     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)01259-X     Document Type: Article
Times cited : (22)

References (11)
  • 7
    • 0005457521 scopus 로고    scopus 로고
    • Survival of single-sided n-bulk detectors after type inversion
    • CERN 4-5 February
    • G. Lutz et al., Survival of single-sided n-bulk detectors after type inversion, 2nd Workshop on Radiation Hardening of Silicon Detectors, CERN 4-5 February 1997.
    • (1997) 2nd Workshop on Radiation Hardening of Silicon Detectors
    • Lutz, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.