Charge collection efficiency of standard and oxygenated silicon microstrip detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 485, Issue 1-2, 2002, Pages 105-108

  Stavitski, I ^a   Rando, R ^a   Bisello, D ^a   Bacchetta, N ^a   Candelori, A ^a   Kaminski, A ^a   Wyss, J ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

Charge collection efficiency; Laser; Microstrip detectors; Oxygenated; Radiation damage; Silicon

Indexed keywords

FABRICATION; LASERS; PROTON IRRADIATION; RADIATION DAMAGE; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SUBSTRATES;

MICROSTRIP DETECTORS;

SILICON SENSORS;

EID: 14244270978     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(02)00539-9     Document Type: Conference Paper

References (11)