Improvement in Fabrication Processes for Electronic Devices of Homoepitaxial Diamond Films

New Diamond and Frontier Carbon Technology

Volumn 11, Issue 5, 2001, Pages 313-324

  Teraji, Tokuyuki ^a   Wang, Chunlei ^a   Endo, Seiichi ^a   Ito, Toshimichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Buffer layer; Chemical cleaning; CVD; Diamond; Doping efficiency; Exciton emission; High quality; Homoepitaxial; Hydrogen annealing; Metal mask; Selective growth

Indexed keywords

EID: 0347116225     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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