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Volumn 68, Issue 20, 2003, Pages

STM measurements on the InAs(110) surface directly compared with surface electronic structure calculations

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; INDIUM;

EID: 0346785286     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.205327     Document Type: Article
Times cited : (33)

References (56)
  • 12
    • 85039015719 scopus 로고
    • Ph.D. thesis, Reinisch-Westfälische Technische Hochschule, Aachen, Germany
    • B. Engels, Ph.D. thesis, Reinisch-Westfälische Technische Hochschule, Aachen, Germany, 1995.
    • (1995)
    • Engels, B.1
  • 38
    • 85038974441 scopus 로고    scopus 로고
    • http://www.flapw.de
  • 50
    • 85039020945 scopus 로고    scopus 로고
    • On large band-gap semiconductors, only the rotation back into the [110] direction has been observed, since the cation dangling bond starts directly at the band edge (Ref. 10 and Refs. 23,24,25)
    • On large band-gap semiconductors, only the rotation back into the [110] direction has been observed, since the cation dangling bond starts directly at the band edge (Ref. 10 and Refs. 23,24,25).
  • 56
    • 85039005019 scopus 로고    scopus 로고
    • (private communication)
    • A. Schwarz (private communication).
    • Schwarz, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.