Model for dopant-induced enhancement in solid-phase epitaxial recrystallization of amorphous Si

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 12 A, 1996, Pages

  Park, B ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHASE TRANSITIONS; RECRYSTALLIZATION (METALLURGY);

SOLID-PHASE EPITAXY;

AMORPHOUS SILICON;

EID: 0030386828     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1611     Document Type: Article

References (26)