Generation and annihilation of intrinsic-related defect centers in 4H/6H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 439-442

  Frank, Th ^a   Weidner, M ^a   Itoh, H ^b   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHARGED PARTICLES; CRYSTAL DEFECTS; ELECTRON IRRADIATION; HIGH TEMPERATURE EFFECTS; ION BOMBARDMENT; ION IMPLANTATION;

HIGH ENERGY ELECTRONS; ISOCHRONAL ANNEALING;

SILICON CARBIDE;

EID: 17044444619     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.439     Document Type: Article

References (7)

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