Raman monitoring of organic semiconductor heterostructure formation

Physica Status Solidi (B) Basic Research

Volumn 215, Issue 1, 1999, Pages 431-434

  Kampen, T U ^a   Tenne, D A ^a   Park, S ^a   Salvan, G ^a   Scholz, R ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAMS;

DENSITY FUNCTIONAL TIGHT BINDINGS; GAAS(1 0 0); ORGANIC MOLECULAR BEAM DEPOSITION; PTCDA FILMS; RAMAN LINES; RAMAN MONITORING; SEMICONDUCTOR HETEROSTRUCTURE; STRUCTURAL QUALITIES;

PASSIVATION;

EID: 0033242198     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-3951(199909)215:1<431::aid-pssb431>3.0.co;2-%23     Document Type: Article

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