Transmission electron microscopy observation of CoSix spikes in Si substrates during Co-silicidation process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6244-6249

  Sukegawa, Takae ^a   Tomita, Hirofumi ^a   Fushida, Atsuo ^a   Goto, Kenichi ^a   Komiya, Satoshi ^a   Nakamura, Tomoji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Co silcide; Interface reaction; Junction leakage; Phase transformation; Spike; Transmission electron microscopy (TEM)

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; DENSITY (SPECIFIC GRAVITY); HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SILICIDE; JUNCTION LEAKAGE; SPIKE FORMATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0031250613     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6244     Document Type: Article

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