Synthesis and optical characterization of erbium-doped III-N double heterostructures

Materials Science and Engineering: B

Volumn 105, Issue 1-3, 2003, Pages 118-121

  Zavada, J M ^a   Lin, J Y ^b   Jiang, H X ^b   Chow, P ^c   Hertog, B ^c   Hommerich U ^d   Nyein, Ei Ei ^d   Jenkinson, H A ^e  

^a U S ARMY RESEARCH OFFICE   (United States)

^b KANSAS STATE UNIVERSITY   (United States)

^c SVT ASSOCIATES   (United States)

^d HAMPTON UNIVERSITY   (United States)

^e US Army ARDEC   (United States)

Author keywords

AlGaN; Double heterostructures; Erbium; Luminescence; Quantum well

Indexed keywords

ENERGY GAP; ERBIUM; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SYNTHESIS (CHEMICAL); ULTRAVIOLET RADIATION;

DOUBLE HETEROSTRUCTURES (DH);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0345447580     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.08.028     Document Type: Conference Paper

References (18)

1. Wilson R.G., Schwartz R.N., Abernathy C.R., Pearton S.J., Newman N., Rubin M., Fu T., Zavada J.M. Appl. Phys. Lett. 65(8):1994;992-994.
2. MacKenzie J.D., Abernathy C.R., Pearton S.J., Hömmerich U., Seo J.T., Wilson R.G., Zavada J.M. Appl. Phys. Lett. 72:1998;2710.
3. Steckl A., Birkhahn R. Appl. Phys. Lett. 73:1998;1702.
4. Birkhahn R., Steckl A.J. Appl. Phys. Lett. 73:1998;2143.
5. Steckl A.J., Zavada J.M. MRS Bull. 24(9):1999;33.
6. U. Hömmerich, J.T. Seo, J.D. MacKenzie, C.R. Abernathy, R. Birkhahn, A.J. Steckl, J.M. Zavada, MRS Fall 1999 Meeting, Paper W11.65.
7. G.S. Pomerenke, P.B. Klein, D.W. Langer (Eds.), Proceedings of the Materials Research Society on Rare Earth Doped Semiconductors I, vol. 301, 1993.
8. S. Coffa, A. Polman, R.N. Schwartz (Eds.), Proceedings of the Materials Research Society on Rare Earth Doped Semiconductors II, vol. 422, 1996.
9. J. Zavada, T. Gregorkiewicz, A.J. Steckl (Eds.), Proceedings of E-MRS Symposium on Rare Earth Doped Semiconductors III, Spring 2000, Mater. Sci. Eng. B 81 (2001).
10. Steckl A.J., Heikenfeld J., Lee D.S., Garter M.J., Baker C.C., Wong Y., Jones R. IEEE J. Sel. Top. Quant. 8:2002;749.
11. Li J., Nam K.B., Nakarmi M.C., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 81:2002;3365.
12. SVT Associates, Inc., unpublished.
13. G.H. Dieke, Spectra and Energy Levels of Rare Earth Ions in Crystals, Wiley, New York, 1968.
14. Koizumi A., Watanabe N., Inoue K., Fujiwara Y., Takeda Y. Physica B. 308-310:2001;891.
15. Yan C.H., Yao W.H., Van Hove J.M., Wochak A.M., Chow P.P., Zavada J.M. J. Appl. Phys. 88:2000;3463.
16. Sotta D., Calvo V., Ulmer-Tuffigo H., Magnea N., Hadji E., Fournel F., Rouviere J.L., Jalabert D., Moriceau H., Aspar B. Mater. Sci. Eng. B. 81:2001;43.
17. Y. Fujiwara, A. Koizumi, Y. Takeda, European Materials Society Spring Meeting 2003, Strasbourg, France, Paper J-III.5.
18. Lozykowski H.J., Jadwisienczak W.M., Han J., Brown I.G. Appl. Phys. Lett. 77:2000;767.