Luminescence properties of Er,O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 891-894

  Koizumi, A ^a   Watanabe, N ^a   Inoue, K ^a   Fujiwara, Y ^a   Takeda, Y ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Double heterostructures; Erbium; Organometallic vapor phase epitaxy; Oxygen

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ERBIUM; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

DOUBLE HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0035669113     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00951-6     Document Type: Article

References (13)