Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates

Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 43-45

  Sotta, D ^a   Calvo, V ^a   Ulmer Tuffigo, H ^a   Magnea, N ^a   Hadji, E ^a   Fournel, F ^a   Rouviere J L ^a   Jalabert, D ^a   Moriceau, H ^a   Aspar, B ^a  

^a CEA GRENOBLE   (France)

Author keywords

Erbium; Photoluminescence; Silicon quantum wells; SOI substrate

Indexed keywords

ANNEALING; ENERGY TRANSFER; ERBIUM; ION IMPLANTATION; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; ULTRAVIOLET RADIATION;

PHOTOGENERATED CARRIERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035942383     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00691-7     Document Type: Article

References (6)