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Volumn , Issue , 1997, Pages 31-36
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Application of high ε paramagnetic and ferroelectric materials to high-transconductance HFETs with low noise and low gate current
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
COERCIVE FORCE;
ELECTRON TUNNELING;
FERROELECTRIC MATERIALS;
GATES (TRANSISTOR);
LEAKAGE CURRENTS;
MAGNETIC HYSTERESIS;
MAGNETIC MATERIALS;
QUANTUM THEORY;
REMANENCE;
SEMICONDUCTOR DEVICE MANUFACTURE;
TRANSCONDUCTANCE;
GATE CAPACITANCE;
PARAMAGNETIC MATERIALS;
FIELD EFFECT TRANSISTORS;
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EID: 0030719781
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (9)
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