Radiation hardness of AlGaN/GaN based HEMTs

Materials Research Society Symposium - Proceedings

Volumn 719, Issue , 2002, Pages 133-138

  Vitusevich, S A ^a,b   Klein, N ^a   Belyaev, A E ^b   Danylyuk, S V ^a,b   Petrychuk, M V ^b   Konakova, R V ^b   Kurakin, A M ^b   Rengevich, A E ^b   Avksentyev, A Yu ^b   Danilchenko, B A ^b   Tilak, V ^c   Smart, J ^c   Vertiatchikh, A ^c   Eastman, L F ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^c Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; IRRADIATION; RADIATION HARDENING; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE;

DOSAGE OF RADIATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036447817     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-719-f5.4     Document Type: Conference Paper

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