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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 319, Issue 3-4, 2003, Pages 367-372

The electric field effect on spin injection in tunneling regime

(3) Wang, Jun a,b Sun, H B a Xing, D Y b

a UNIVERSITY OF QUEENSLAND (Australia)

b NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; QUANTUM CHEMISTRY; SCHOTTKY BARRIER DIODES;

EXTERNAL ELECTRIC FIELD; QUANTUM TUNNELING; SCHOTTKY BARRIERS; SPIN INJECTION; SPIN-DEPENDENT TRANSPORT PROPERTIES; TUNNELING REGIME;

ELECTRIC FIELD EFFECTS;

FERROMAGNETIC MATERIAL;

ARTICLE; DENSITY; ELECTRIC FIELD; ELECTRON; ELECTRON TRANSPORT; INJECTION; QUANTUM THEORY; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 0345303924 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/j.physleta.2003.09.076 Document Type: Article

Times cited : (2)

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