Spin-polarized electron injection through an Fe/InAs junction

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 2 A, 2003, Pages

  Ohno, Hiroshi ^a   Yoh, Kanji ^a   Sueoka, Kazuhisa ^a   Mukasa, Koichi ^a   Kawaharazuka, Atsushi ^b   Ramsteiner, Manfred E ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Epitaxial growth; Fe InAs junction; Indium arsenide; Spin injection; Spintronics; Zeeman splitting

Indexed keywords

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; IRON; MAGNETIC FIELDS; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE; THIN FILMS;

INDIUM ARSENIDE; SPIN INJECTION EFFICIENCY; SPIN POLARIZED ELECTRON INJECTION;

ELECTRON EMISSION;

EID: 0242584442     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.L87     Document Type: Letter

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