Photoluminescence and Optical Characterizations of Nanocrystalline Silicon Dots Formed by Plasma-Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6296-6302

  Kurosaki, Ken Ichi ^a   Hashimoto, Koji ^a   Nakao, Aiko ^b   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

nc Si dots; Photoluminescence; rf PE CVD; SiCl4; Surface oxidation

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATTENUATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MONOCHROMATORS; OXIDATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

NANOCRYSTALLINE SILICON DOTS; SURFACE OXIDATION;

NANOSTRUCTURED MATERIALS;

EID: 0348156936     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6296     Document Type: Article

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