Formation of Si:H:Cl films at low temperatures of 90-140°C by RF plasma-enhanced chemical vapor deposition of a SiH2Cl2 and H2 mixture

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 3, 2003, Pages 1173-1178

  Hashimoto, Koji ^a   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

A Si:H:Cl; Dichlorosilane; Ellipsometry; In situ FTIR RAS; PE CVD; PL

Indexed keywords

ABSORPTION SPECTROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; HYDROGENATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS;

SPECTROSCOPIC ELLIPSOMETRY (SE);

POLYSILANES;

EID: 0037841887     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1173     Document Type: Article

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